Seria: Seminarium Zakładu Energetyki Jądrowej i Analiz Środowiska (UZ3)

Prelegent i afiliacja: Yosuke Nishimura University of Tokyo

Data: 09.04.2024, godz. 11:30

Miejsce: sala 172, bud. 39 (Cyfronet, III piętro) / https://www.gotomeet.me/NCBJmeetings/uz3-and-phd4gen-seminars

Streszczenie: Although much emphasis is given to enhancing the safety performance while designing reaction-sintered SiC fuel matrices, oxidation behavior of these Si-rich SiC fuel matrices is an emerging area of research for the targeted innovative nuclear energy application. Predicting the oxide growth process and understanding the potential impact of excess Si on high-temperature oxidation are vital in ensuring fuel safety during the postulated accidental scenario. Using TGA, XRD, and SEM-EDX, the study tracks the oxidation process, highlighting excellent antioxidation properties in air up to 1400 ℃ associated with dense oxide formation in irregular thickness. The study reveals that the reaction-sintered SiC matrix possesses free Si about 10 wt.%. Unlike the Si-less matrix, the Si rich area promotes passive oxidation rate while preventing corrosive active oxidation mode in 1 ppm oxygen concentration at 1400 ℃. The excess Si within the SiC matrix may play a crucial role in improving the oxidation behaviors, and thus may positively affect the overall quality of the SiC fuel matrices. The findings of this research offer valuable insights to deconvolute the mechanism for oxide growth and will pave the way for a predictive design of SiC fuel matrix with improved resistance to oxidation under extreme conditions, facilitating fabrication technology for improved performance and durability by the reaction sintering method.