What do we do?
 

The laboratory's activities focus on basic research into the structural properties of modern materials used in nuclear energy, microelectronics and optoelectronics. We use ion techniques and material topography imaging with a scanning electron microscope.

A key element of our research is quantitative analysis of: 
•    layer thickness and stoichiometry,
•    crystalline quality of the material,
•    depth distributions of elements in doped materials,
•    accumulation and transformation processes of defect structures occurring in crystals under the influence of implantation, 
•    optimisation of annealing processes (RTA, FLASH),
•    the influence of annealing on the depth distribution and evolution of post-implantation defects, as well as on the lattice location and depth migration of the dopant.

In the laboratory, we deal with the comprehensive characterisation of materials, combining structural studies with a series of additional analyses determining the chemical composition and internal stresses in the tested crystal structures. For this purpose, we use, among others, Raman spectroscopy and X-ray diffraction. Transmission electron microscopy imaging is also an important part of our research.

The laboratory also deals with the creation, development and validation of programmes used for the simulation analysis of real spectra obtained using ion techniques. It is here that the McChasy programme, based on the Monte Carlo method, is implemented and improved, in which spectra obtained in the channelling direction are analysed. This makes it possible to distinguish between simple and complex defects occurring in surface-modified materials. Currently, thanks to the development of computing power, the Laboratory team is working on a new method compatible with simulations based on molecular dynamics.